, u na. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 silicon pnp power transistor 2SB856 description ? collector current: lc= -3a ? low collector saturation voltage : vce(sa<)= -1.2v(max)@lc= -2a ? high collector power dissipation applications ? designed for low frequency power amplifier applications. absolute maximum ratings(ta=25'c) symbol vcbo vceo vebo ic pc tj tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous total power dissipation @ tc=25c junction temperature storage temperature range value -50 -50 -4 -3 25 150 -45-150 unit v v v a w r 'c . ^.,, 2 i ^ pih: 1 base '< . i 2 collector ' ' 3 e-itter ] "' ^. to-220c package u r .jllj a -i b p. i^vt - r h k f , h c 4 oh dm a b c d f g h j k l q r s u v x--? l 0 ??-* mm win 15.50 9.90 4.20 0.70 3.40 4.98 2 68 0.44 13. 00 1.10 2.70 2.30 1.29 6.45 8.66 max 15.90 10,20 4,50 0.90 3.70 5.18 2.90 0.60 13.40 1.45 2.90 2.70 1.35 6.65 8.86 r "" 1 *" * j rk n.i semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to he both accurate and reliable at the time of noii |o press. i loucvcr. n.i scmi-conductors assumes no responsibility lor any errors or omissions discovered in its use. n.i semi-condticlors encourages customers lo \crily thai datasheets are cunvnl before placing orders. qualify semi-conductors
silicon pnp power transistor 2SB856 electrical characteristics tc=25'c unless otherwise specified symbol v(br)ceo v(br)cbo v(br)ebo vce(sat) vee(on) icbo hpe-1 hfe-2 fi parameter collector-emitter breakdown voltage collector-base breakdown voltage emitter-base breakdown voltage collector-emitter saturation voltage base-emitter on voltage collector cutoff current dc current gain dc current gain current-gain?bandwidth product conditions lc= -30ma ; rbe= ? lc= -5ma ; ie= 0 !e= -5ma; lc= 0 lc= -2a; ib= -0.2a lc= -1a; vce= -4v vcb= -20v; ie= 0 lc= -1a; vce= -4v ic=-0.1a;vce=-4v lc= -0.5a; vce= -4v min -50 -50 -4 35 35 typ. 35 max -1.2 -1.5 -100 200 unit v v v v v u a mhz hpe-1 classifications a 35-70 b 60-120 c 100-200
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